Document
256Mb, 512Mb, 1Gb StrataFlash Memory Features
Micron StrataFlash Embedded Memory
MT28GU256AAA1EGC-0SIT, MT28GU256AAA2EGC-0SIT MT28GU512AAA1EGC-0SIT, MT28GU512AAA2EGC-0SIT, MT28GU01GAAA1EGC-0SIT, MT28GU01GAAA2EGC-0SIT
Features
• High-performance read, program, and erase – 96ns initial read access – 108 MHz with zero wait-state synchronous burst reads: 7ns clock-to-data output – 133 MHz with zero wait-state synchronous burst reads: 5.5ns clock-to-data output – 8-, 16-, and continuous-word synchronous-burst reads – Programmable WAIT configuration – Customer-configurable output driver impedance – Buffered Programming: 2.0 μs/Word (TYP), 512Mb, 65nm – Block erase: 0.9s per block (TYP) – 20μs (TYP) program/erase suspend
• Architecture – 16-bit wide data bus – Multilevel cell technology – Symmetrically-blocked array architecture – 256KB erase blocks – 1Gb device: Eight 128Mb partitions – 512Mb device: Eight 64Mb partitions – 256Mb device: Eight 32Mb part.