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MT28GU256AAA2EGC-0SIT Dataheets PDF



Part Number MT28GU256AAA2EGC-0SIT
Manufacturers MICRON
Logo MICRON
Description StrataFlash Embedded Memory
Datasheet MT28GU256AAA2EGC-0SIT DatasheetMT28GU256AAA2EGC-0SIT Datasheet (PDF)

256Mb, 512Mb, 1Gb StrataFlash Memory Features Micron StrataFlash Embedded Memory MT28GU256AAA1EGC-0SIT, MT28GU256AAA2EGC-0SIT MT28GU512AAA1EGC-0SIT, MT28GU512AAA2EGC-0SIT, MT28GU01GAAA1EGC-0SIT, MT28GU01GAAA2EGC-0SIT Features • High-performance read, program, and erase – 96ns initial read access – 108 MHz with zero wait-state synchronous burst reads: 7ns clock-to-data output – 133 MHz with zero wait-state synchronous burst reads: 5.5ns clock-to-data output – 8-, 16-, and continuous-word synchro.

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Document
256Mb, 512Mb, 1Gb StrataFlash Memory Features Micron StrataFlash Embedded Memory MT28GU256AAA1EGC-0SIT, MT28GU256AAA2EGC-0SIT MT28GU512AAA1EGC-0SIT, MT28GU512AAA2EGC-0SIT, MT28GU01GAAA1EGC-0SIT, MT28GU01GAAA2EGC-0SIT Features • High-performance read, program, and erase – 96ns initial read access – 108 MHz with zero wait-state synchronous burst reads: 7ns clock-to-data output – 133 MHz with zero wait-state synchronous burst reads: 5.5ns clock-to-data output – 8-, 16-, and continuous-word synchronous-burst reads – Programmable WAIT configuration – Customer-configurable output driver impedance – Buffered Programming: 2.0 μs/Word (TYP), 512Mb, 65nm – Block erase: 0.9s per block (TYP) – 20μs (TYP) program/erase suspend • Architecture – 16-bit wide data bus – Multilevel cell technology – Symmetrically-blocked array architecture – 256KB erase blocks – 1Gb device: Eight 128Mb partitions – 512Mb device: Eight 64Mb partitions – 256Mb device: Eight 32Mb part.


MT28GU256AAA1EGC-0SIT MT28GU256AAA2EGC-0SIT MT28GU512AAA1EGC-0SIT


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