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2SC2073

Part Number	2SC2073
Manufacturer	GME
Description	NPN Triple Didduesd Planar Silicon Transistor
Published	Aug 22, 2017
Detailed Description	Production specification NPN Triple Didduesd Planar Silicon Transistor 2SC2073 FEATURES z High Breakdown Voltage(VCBO...
Datasheet	2SC2073 PDF File

Overview

Production specification NPN Triple Didduesd Planar Silicon Transistor 2SC2073 FEATURES z High Breakdown Voltage(VCBO≥900V).
z Fast Switching Speed.
z Wide ASO.
Pb Lead-free TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 900 V VCEO VEBO IC IB PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Pulse Base Crrent Collector Dissipation Junction and Storage Temperature Ta=25℃ Tc=25℃ 800 V 7V 1.
5 A 5 0.
8 A 2 W 40 -55 to +150 ℃ X033 Rev.
A www.
gmicroelec.
com 1 Production specification NPN Triple Didduesd Planar Silicon Transistor 2SC2073 ELECT...

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