VB40M120C-E3, VB40M120C-M3, VB40M120CHM3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Bar...
VB40M120C-E3, VB40M120C-M3, VB40M120CHM3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.46 V at IF = 5 A
TMBS ®
TO-263AB
K
2
1
VB40M120C
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 20 A TJ max. Package
2 x 20 A 120 V 250 A 0.64 V 150 °C
TO-263AB
Diode variations
Common cathode
FEATURES
Trench MOS
Schottky technology
Low forward voltage drop, low power losses
High efficiency operation AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
MECHANICAL DATA
Case: TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-co...
