V30120C-E3, VF30120C-E3, VB30120C-E3, VI30120C-E3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trenc...
V30120C-E3, VF30120C-E3, VB30120C-E3, VI30120C-E3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V30120C
3 2 1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
VF30120C
123
PIN 1
PIN 2
PIN 3
TO-262AA K
FEATURES
Trench MOS
Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package) Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.
2 1
VB30120C
PIN 1
K
PIN 2
HEATSINK
VI30120C
PIN 1
3 2 1
PIN 2
PIN 3
K
PRIMARY ...
