MJE243

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTOR MJE243 TO-126 Plastic Package ECB Complementary MJE253 Designed for Low Power Audio Amplifier and Low-Current, High-Speed Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Continuous Collector Current Peak Base Current Total Power Dissipation @ Tc=25 ºC Derate Above 25ºC Total Power Dissipation @ Ta=25 ºC Derate Above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCBO VCEO VEBO IC IB PD PD Tj, Tstg Value 100 100 7.0 4.0 8.0 1.0 15 0.12 1.5 0.012 - 65 to +150 UNIT V V V A A W W/ºC W W/ºC ºC Thermal Characteristics Junction to Case Junction to Ambient Rth(j-c) Rth(j-a) 8.34 ºC/W 83.4 ºC/W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise ) DESCRIPTION Collector Emitter Sustaning Voltage Collector Cut off Current SYMBOL VCEO (Sus) I...