POWER SEMICONDUCTOR
Features
• High Current Gain • 600 mW Power Dissipation
Mechanical Data
• Case: TO-92, Plastic • Lea...
POWER SEMICONDUCTOR
Features
High Current Gain 600 mW Power Dissipation
Mechanical Data
Case: TO-92, Plastic Leads: Solderable per MIL-STD-202,
Method 208 Pin Connections: See Diagram Marking: Type Number Approx. Weight: 0.18 grams
2N5172
NPN SMALL SIGNAL
TRANSISTOR
EA B
C
D
BOTTOM B C E VIEW HH G
TO-92 Dim Min Max
A 4.32 4.83 B 4.32 4.78 C 12.50 15.62 D 0.36 0.56 E 3.15 3.94 G 2.29 2.79 H 1.14 1.40 All Dimensions in mm
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Power Dissipation (Notes 2 & 3) Operating and Storage Temperature Range
Symbol VCEO VCBO VEBO IC Pd
Tj, TSTG
Value 25 25 5.0 500 600
-55 to +150
Unit V V V mA
mW °C
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic Collecto-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Collector Cutoff Current Emitte...
