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BF422 Dataheets PDF



Part Number BF422
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description High Voltage Transistors
Datasheet BF422 DatasheetBF422 Datasheet (PDF)

BF422 High Voltage Transistors NPN Silicon Features • This is a Pb−Free Device* MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Total Device Dissipation (Note 1) @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC ICM PD TJ, Tstg Value 250 250 5.0 50 100 830 6.6 −55 to +150 Unit Vdc Vdc Vdc mAdc mA mW mW/°C °C THERMAL CHARACTERISTICS C.

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BF422 High Voltage Transistors NPN Silicon Features • This is a Pb−Free Device* MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Total Device Dissipation (Note 1) @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC ICM PD TJ, Tstg Value 250 250 5.0 50 100 830 6.6 −55 to +150 Unit Vdc Vdc Vdc mAdc mA mW mW/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Symbol RqJA Max 150 Unit °C/W Thermal Resistance, Junction−to−Lead RqJL °C/W 68 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Mounted on a FR4 board with 200 mm2 of 1 oz.


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