Document
BF422
High Voltage Transistors
NPN Silicon
Features
• This is a Pb−Free Device*
MAXIMUM RATINGS Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Total Device Dissipation (Note 1) @ TA = 25°C Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol VCEO VCBO VEBO IC ICM PD
TJ, Tstg
Value 250 250 5.0 50 100
830 6.6 −55 to +150
Unit Vdc Vdc Vdc mAdc mA
mW mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Symbol RqJA
Max 150
Unit °C/W
Thermal Resistance, Junction−to−Lead
RqJL
°C/W 68
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Mounted on a FR4 board with 200 mm2 of 1 oz.