Document
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
Pb-Free Package is available.
ORDERING INFORMATION
Device
Package
L8550*LT1
SOT-23
L8550*LT1G (Pb-Free)
SOT-23
Shipping 3000/Tape&Reel
3000/Tape&Reel
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector-Emitter Voltage Collector-Base voltage Emitter-base Voltage Collector current-continuoun THERMALCHARACTERISTICS
V CEO V CBO V EBO
IC
25 V 40 V 5V 800 mAdc
Characteristic
Symbol Max
Unit
Total Device Dissipation FR- 5 Board (1) T A = 25 °C Derate above 25 °C
PD 225 mW 1.8 mW /°C
Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25 °C Derate above 25 °C
R θJA
556 °C/W
PD
300 mW
2.4 mW /°C
Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICEMARKING
R θJA
417 °C/W
T J , T stg -55 to +150 °C
L8550QLT1 = 1YD L8550PLT1=85P
ELECTRICAL CHARACTERISTICS (T A = 25 °C unless otherwise noted)
Characteristic
Symb.