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L8550QLT1 Dataheets PDF



Part Number L8550QLT1
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description General Purpose Transistors
Datasheet L8550QLT1 DatasheetL8550QLT1 Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE Pb-Free Package is available. ORDERING INFORMATION Device Package L8550*LT1 SOT-23 L8550*LT1G (Pb-Free) SOT-23 Shipping 3000/Tape&Reel 3000/Tape&Reel MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage Collector-Base voltage Emitter-base Voltage Collector current-continuoun THERMALCHARACTERISTICS V CEO V CBO V EBO IC 25 V 40 V 5V 800 mAdc Characteristic Symbol Max Unit Total Device Diss.

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE Pb-Free Package is available. ORDERING INFORMATION Device Package L8550*LT1 SOT-23 L8550*LT1G (Pb-Free) SOT-23 Shipping 3000/Tape&Reel 3000/Tape&Reel MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage Collector-Base voltage Emitter-base Voltage Collector current-continuoun THERMALCHARACTERISTICS V CEO V CBO V EBO IC 25 V 40 V 5V 800 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR- 5 Board (1) T A = 25 °C Derate above 25 °C PD 225 mW 1.8 mW /°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25 °C Derate above 25 °C R θJA 556 °C/W PD 300 mW 2.4 mW /°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICEMARKING R θJA 417 °C/W T J , T stg -55 to +150 °C L8550QLT1 = 1YD L8550PLT1=85P ELECTRICAL CHARACTERISTICS (T A = 25 °C unless otherwise noted) Characteristic Symb.


L8550 L8550QLT1 L8550PLT1


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