MMBT3904T
General Purpose NPN SiliconTransistor
P b Lead(Pb)-Free
COLLECTOR 3
Maximum Ratings
Rating Collector-Emitt...
MMBT3904T
General Purpose
NPN Silicon
Transistor
P b Lead(Pb)-Free
COLLECTOR 3
Maximum Ratings
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous
1 BASE
2 EMITTER
Symbol VCEO VCBO VEBO
IC
1 2
3
SC-89 SOT-523F
Value 40 60 6.0 200
Unit Vdc Vdc Vdc mAdc
Thermal Characteristics
Characteristics Total Device Dissipation FR-5 Board (1) TA=25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA=25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction Temperature
Storage Temperature
Device Marking
MMBT3904T=MA
Symbol
PD RθJA
PD RθJA
TJ Tstg
Max 200
1.6 600 300
2.4 400 -55 to +150
-55 to +150
Unit mW
mW/°C °C/W mW
mW/°C °C/W
°C
°C
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics
Off Characteristics
Collector-Emitter Breakdown Voltage(3) (IC=1.0mA ,IB=0)
Collector-Base Breakdown Voltage (IC=10 µA , IE=0)
Emitter-Base ...