BC868

SOT89 Plastic-Encapsulate Transistors BC868 TRANSISTOR (NPN) FEATURES z High current z Low voltage MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 32 20 5 1 500 150 -55~150 Unit V V V A mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 Collector cut-off current ICBO VCB=25V,IE=0 Emitter cut-off current IEBO VEB=5V,IC=0 hFE(1) VCE=1V,IC=500mA DC current gain hFE(2) VCE=1V,IC=1A hFE(3) VCE=10V,IC=5mA Collector-emitter saturation voltage VCE(sat) IC=1A,IB=100mA Base-emitter voltage VBE1 VBE2 VCE=10V,IC=5mA VCE=1V,IC=...