MMBTA42W

MMBTA42W NPN Silicon High Voltage Transistors for high voltage switching and amplifier applications. Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol SOT-323 Plastic Package Value Unit Collector Base Voltage VCBO 300 V Collector Emitter Voltage VCEO 300 V Emitter Base Voltage VEBO 6 V Collector Current Power Dissipation Junction and Storage Temperature Range Characteristics at Ta = 25 OC HParameter DC Current Gain at VCE = 10 V, IC = 1 mA Cat VCE = 10 V, IC = 10 mA at VCE = 10 V, IC = 30 mA Collector Base Cutoff Current Eat VCB= 200 V Emitter Base Cutoff Current Tat VEB= 6 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage Mat IC= 1 mA Emitter Base Breakdown Voltage Eat IE= 100 µA Collector Emitter Saturation Voltage Sat IC = 20 mA, IB = 2 mA IC Ptot Tj, Tstg 500 200 - 55 to + 150 mA mW OC Symbol hFE hFE hFE ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) Min. 25 80 40 - - 300 300 6 - Max. 200 0.1 0.1 - - - 0.5 Unit µA ...