MMBT4403W

Elektronische Bauelemente RoHS Compliant Product MMBT4403W PNP Silicon Switching Transistor COLLECTOR 3 1 BASE 2 EMITTER 3 1 2 A L Top View BS VG C D H K J MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING MMBT4403W = K3T, 2T Symbol VCEO VCBO VEBO IC Value –40 –40 –5.0 –600 Symbol PD RqJA PD RqJA TJ, Tstg Max 200 1.8 556 200 2.4 417 – 55 to +150 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(3) (IC = –1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –0.1 mA...