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MMBT4401W

JR Electronics
Part Number MMBT4401W
Manufacturer JR Electronics
Description NPN Silicon General Purpose Transistor
Published Aug 3, 2017
Detailed Description NPN Silicon General Purpose Transistor MMBT4401W Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltag...
Datasheet PDF File MMBT4401W PDF File

MMBT4401W
MMBT4401W

Overview
NPN Silicon General Purpose Transistor MMBT4401W Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 1 V, IC = 0.
1 mA at VCE = 1 V, IC = 1 mA at VCE = 1 V, IC = 10 mA at VCE = 1 V, IC = 150 mA at VCE = 2 V, IC = 500 mA Collector Cutoff Current at VCB = 35 V Base Cutoff Current at VEB = 5 V Collector Base Breakdown Voltage at IC = 0.
1 mA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 0.
1 mA Collector Emitter Saturation Voltage at IC =...


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