MMBT2907W / MMBT2907AW
PNP Silicon Epitaxial Planar Medium Power Transistor for switching and amplifier applications
Ab...
MMBT2907W / MMBT2907AW
PNP Silicon Epitaxial Planar Medium Power
Transistor for switching and amplifier applications
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range
Symbol
-VCBO -VCEO -VEBO
-IC Ptot Tj TS
Value MMBT2907W MMBT2907AW
60 40 60
5 600 200 150 -55 to +150
Unit
V V V mA mW OC OC
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 15/03/2006
MMBT2907W / MMBT2907AW
Characteristics at Ta = 25 OC
Parameter
DC Current Gain at -VCE = 10 V, -IC = 0.1 mA
at -VCE = 10 V, -IC = 1 mA
at -VCE = 10 V, -IC = 10 mA
at -VCE = 10 V, -IC = 150 mA at -VCE = 10 V, -IC = 500 mA
Collector Base Voltage at -IC = 10 µA Collector Emitter Voltage at -IC = 10 mA
MMBT2907W MMBT2907AW MMBT2907W MMBT2907AW MMBT2907W MMBT2907AW
MMBT2...