MMBT2222W / MMBT2222AW
NPN Silicon Epitaxial Planar Medium Power Transistor for switching and amplifier applications
Ab...
MMBT2222W / MMBT2222AW
NPN Silicon Epitaxial Planar Medium Power
Transistor for switching and amplifier applications
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range
Symbol
VCBO VCEO VEBO
IC Ptot Tj Tstg
Value MMBT2222W MMBT2222AW
60 75 30 40 56
600 200 150 - 55 to + 150
Unit
V V V mA mW OC OC
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3/17/2014
MMBT2222W / MMBT2222AW
Characteristics at Ta = 25 OC Parameter
DC Current Gain at VCE = 10 V, IC = 0.1 mA at VCE = 10 V, IC = 1 mA at VCE = 10 V, IC = 10 mA at VCE = 1 V, IC = 150 mA at VCE = 10 V, IC = 150 mA at VCE = 10 V, IC = 500 mA
Collector Base Voltage at IC = 10 µA
MMBT2222W MMBT2222AW
MMBT2222W MMBT2222AW
Collector Emitter Voltage at IC = 10 mA
MMBT2222W MMBT2222AW
Emitter Base Voltage at IE = 10 µA
MMBT2222W MMBT2222AW
Collector Base Cutoff Current at VCB = 50 V at VCB = 60 V
Emitter Base Cuto...