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BC858W

GME

PNP Silicon Epitaxial Planar Transistor

Production specification PNP Silicon Epitaxial Planar Transistor BC856W/BC857W/BC858W FEATURES z For AF input stages a...


GME

BC858W

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Production specification PNP Silicon Epitaxial Planar Transistor BC856W/BC857W/BC858W FEATURES z For AF input stages and driver applications. z High current gain. Pb Lead-free z Low collector-emitter saturation voltage. z Low noise between 30Hz and 15 kHz. z Complementary types:BC846W,BC847W,BC848W. APPLICATIONS z General purpose switching and amplification application. SOT-323 ORDERING INFORMATION Type No. Marking BC856W BC857W BC858W 3A/3B 3E/3F/3G 3J/3K/3L Package Code SOT-323 SOT-323 SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO Parameter Collector-Base Voltage Collector-Emitter Voltage BC856W BC857W BC858W BC856W BC857W BC858W Value -80 -50 -30 -65 -45 -30 VEBO Emitter-Base Voltage -5 IC Collector Current -Continuous -100 ICM Peak Collector current -200 IBM Peak Base current -200 PC Collector Dissipation 200 Tj,Tstg Junction and Storage Temperature -65 to +150 Units V V V mA mA mA mW ℃ F046 Rev.A www.gmicroelec....




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