Silicon Epitaxial Planar Transistor
FEATURES
z Complementary To S9015W. z Excellent HFE Linearity. z Power dissipation....
Silicon Epitaxial Planar
Transistor
FEATURES
z Complementary To S9015W. z Excellent HFE Linearity. z Power dissipation.(PC=0.2W)
Pb
Lead-free
APPLICATIONS
z Per-Amplifier low level & low noise.
ORDERING INFORMATION
Type No.
Marking
S9014W
J6
Production specification
S9014W
SOT-323 Package Code
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
50
VCEO
Collector-Emitter Voltage
45
VEBO
Emitter-Base Voltage
5
IC Collector Current -Continuous
100
PC Collector Dissipation
200
Tj,Tstg
Junction and Storage Temperature
-55 to +150
Units V V V mA mW ℃
F059 Rev.A
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Production specification
Silicon Epitaxial Planar
Transistor
S9014W
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0
50
V
Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0
45
V
...
