Document
Silicon Epitaxial Planar Transistor
FEATURES
z Collector Current.(IC= 1.5A) z Complementary To SS8550W.
Pb
Lead-free
z Collector Dissipation: PC=0.2W (TC=25°C)
APPLICATIONS
z High Collector Current.
ORDERING INFORMATION
Type No.
Marking
SS8550W
Y2
Production specification
SS8550W
SOT-323 Package Code
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO VCEO VEBO IC PC Tj,Tstg
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature
-40 -25 -5 -1.5 0.2 -55 to +150
Units V V V A W ℃
F062 Rev.A
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Production specification
Silicon Epitaxial Planar Transistor
SS8550W
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage
V(BR)CBO V(BR)CEO V(BR)EBO
IC=-100.