SILICON MULTI-EPITAXIAL NPN TRANSISTOR
2N6277
• High VCEO. • High DC Current Gain, hFE. • Low Collector-Emitter Saturat...
SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
2N6277
High VCEO. High DC Current Gain, hFE. Low Collector-Emitter Saturation Voltage, VCE(sat). Fast Switching. Hermetic TO3 Metal package. Ideally suited for Power Amplifier and Switching Applications. Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
180V
VCEO
Collector – Emitter Voltage
150V
VEBO
Emitter – Base Voltage
6V
IC Continuous Collector Current
50A
ICM Peak Collector Current
100A
IB Base Current
20A
PD Total Power Dissipation at TC = 25°C
250W
Derate Above 25°C
1.43W/°C
TJ Junction Temperature Range
-65 to +200°C
Tstg Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJC
Thermal Resistance, Junction To Case
Min. Typ. Max. Units 0.7 °C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information fu...