T2960BB45E

Date:- 11 Jan, 2020 Data Sheet Issue:- 2 Insulated Gate Bi-Polar Transistor Type T2960BB45E Absolute Maximum Ratings VCES VDC link VGES VOLTAGE RATINGS Collector – emitter voltage Permanent DC voltage for 100 FIT failure rate. Peak gate – emitter voltage MAXIMUM LIMITS 4500 2800 ±20 UNITS V V V IC ICRM IECO PMAX Tj op Tstg RATINGS Continuous DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Maximum reverse emitter current, tp=100µs, (note 2 & 3) Maximum power dissipation, IGBT (note 2) Operating temperature range Storage temperature range Notes: 1) Unless otherwise indicated Tj = 125ºC. 2) Tsink = 25°C, double side cooled. 3) Maximum commutation loop inductance 200nH. 4) Half-sinewave, 125°C Tj initial. MAXIMUM LIMITS 3000 6000 3000 23.8 -40 to +125 -40 to +125 UNITS A A A kW °C °C Data Sheet T2960BB45E Issue 2 Page 1 of 7 January, 2020 Characteristics IGBT Characteristics PARAMETER VCE(sat) Collector – emitter saturation voltage VT0 rT VGE(TH) ICES IGES Cies td(on) tr(V) Qg(on) Eon td(off) tf(I) Qg(off) Eoff Threshold voltage Slope resistance Gate threshold voltage Collector – emitter cut-off current Gate leakage current Input capacitance Turn-on delay time Rise time Turn-on gate charge Turn-on energy Turn-off delay time Fall time Turn-off gate charge Turn-off energy ISC Short circuit current Insulated Gate Bi-polar Transistor Type T2960BB45E MIN - - - TYP 2.75 3.6 5.1 55 495 1.1 2.2 21 11.5 5.3 2.5 18 17.5 10.9 MAX 3.15 4.0 ...