MMBT6428LT1G, MMBT6429LT1G, NSVMMBT6429LT1G
Amplifier Transistors
NPN Silicon
Features
• NSV Prefix for Automotive and O...
MMBT6428LT1G, MMBT6429LT1G, NSVMMBT6429LT1G
Amplifier
Transistors
NPN Silicon
Features
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
www.onsemi.com
COLLECTOR 3
1 BASE
2 EMITTER
MAXIMUM RATINGS
Rating
Symbol 6428LT1 6429LT1 Unit
Collector −Emitter Voltage
VCEO
50
45 Vdc
Collector −Base Voltage
VCBO
60
55 Vdc
Emitter −Base Voltage
VEBO 6.0 Vdc
Collector Current − Continuous
IC
200 mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS Rating
Symbol
Value
Unit
Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C
PD
225 mW 1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
RqJA
556 °C/W
Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C
PD 300 mW 2.4 mW/°C
Thermal Resistance, Junction−to−Ambient
RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg
1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
−55 to +150
°C
© Semiconductor Components Industries, LLC, 1994
October, 2017 − Rev. 8
1
3
1 2
SOT−23 (TO−236) CASE 318 STYLE 6
MARKING DIAGRAM
XXX MG G
1
XXX = Specific Device Code MMBT6428LT1 − 1KM NSV/MM...