MMBT2222ATT1G

MMBT2222ATT1G, NSVMMBT2222ATT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−416/SC−75 package which is designed for low power surface mount applications. Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS VCEO VCBO VEBO IC 40 Vdc 75 Vdc 6.0 Vdc 600 mAdc Characteristic Symbol Max Unit Total Device Dissipation (Note 1) TA = 25°C Thermal Resistance, Junction−to−Ambient PD RqJA 150 mW 833 °C/W Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 ...