Document
TRANSISTOR(NPN)
FEATURES z High breakdown voltage z Low collector-emitter saturation voltage z Complementary to MMBTA92 (PNP)
Marking: 1D
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RӨJA TJ Tstg
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Thermal Resistance, junction to Ambient Junction Temperature Storage Temperature
Value 300 300
5 0.3 0.35 357 150 -55to +150
Units V V V A W
℃/mW ℃ ℃
MMBTA42
SOT-23
1. BASE 2. EMITTER 3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency
V(BR)CBO V(BR)CEO V(BR)EBO
ICBO IEBO hFE(1) hFE(2) hFE(3) V.