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MCMA35PD1200TB Dataheets PDF



Part Number MCMA35PD1200TB
Manufacturers IXYS
Logo IXYS
Description Thyristor / Diode Module
Datasheet MCMA35PD1200TB DatasheetMCMA35PD1200TB Datasheet (PDF)

Thyristor \ Diode Module Phase leg Part number MCMA35PD1200TB 3 1 5 42 MCMA35PD1200TB VRRM I TAV VT = 2x 1200 V = 35 A = 1.22 V Backside: isolated Features / Advantages: ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Direct Copper Bonded Al2O3-ceramic Applications: ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control Package: TO-240AA ● Isolation Voltage: 4800 V~ .

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Thyristor \ Diode Module Phase leg Part number MCMA35PD1200TB 3 1 5 42 MCMA35PD1200TB VRRM I TAV VT = 2x 1200 V = 35 A = 1.22 V Backside: isolated Features / Advantages: ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Direct Copper Bonded Al2O3-ceramic Applications: ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control Package: TO-240AA ● Isolation Voltage: 4800 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191205d MCMA35PD1200TB Rectifier Ratings Symbol VRSM/DSM VRRM/DRM I R/D VT I TAV I T(RMS) VT0 rT R thJC RthCH Ptot I TSM I²t CJ PGM PGAV (di/dt)cr (dv/dt)cr VGT IGT VGD IGD IL IH t gd tq Definition Conditions max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage reverse current, drain current VR/D = 1200 V VR/D = 1200 V forward voltage drop IT = 35 A I T = 70 A IT = 35 A I T = 70 A average forward current TC = 85°C RMS forward current 180° sine threshold voltage slope resistance for power loss calculation only TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 140°C TVJ = 25°C min. TVJ = 125 °C TVJ = 140°C TVJ = 140°C thermal resistance junction to case thermal resistance case to heatsink total power dissipation max. forward surge current value for fusing junction capacitance max. gate power dissipation average gate power dissipation critical rate of rise of current critical rate of rise of voltage gate trigger voltage gate trigger current gate non-trigger voltage gate non-trigger current t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine VR = 400 V tP = 30 µs tP = 300 µs f = 1 MHz TC = 25°C TVJ = 45°C VR = 0 V TVJ = 140°C VR = 0 V TVJ = 45°C VR = 0 V TVJ = 140°C VR = 0 V TVJ = 25°C TC = 140°C TVJ = 140 °C; f = 50 Hz repetitive, IT = 105 A tP = 200 µs; diG /dt =0.45 A/µs; IG = 0.45 A; V = ⅔ VDRM non-repet., IT = 35 A V = ⅔ VDRM TVJ = 140°C R GK = ∞; method 1 (linear voltage rise) VD = 6 V TVJ = 25°C TVJ = -40°C VD = 6 V TVJ = 25°C TVJ = -40°C VD = ⅔ VDRM TVJ = 140°C latching current holding current gate controlled delay time turn-off time t p = 10 µs TVJ = 25 °C IG = 0.45 A; diG/dt = 0.45 A/µs VD = 6 V RGK = ∞ TVJ = 25 °C VD = ½ VDRM TVJ = 25 °C IG = 0.45 A; diG/dt = 0.45 A/µs VR = 100 V; IT = 35A; V = ⅔ VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt = 20 V/µs tp = 200 µs typ. max. Unit 1300 V 1200 V 100 µA 6 mA 1.23 V 1.50 V 1.22 V 1.56 V 35 A 55 A 0.87 V 9.8 mΩ 0.9 K/W 0.2 K/W 120 W 520 A 560 A 440 A 475 A 1.35 kA²s 1.31 kA²s 970 A²s 940 A²s 22 pF 10 W 5W 0.5 W 150 A/µs 500 A/µs 1000 V/µs 1.5 V 1.6 V 78 mA 200 mA 0.2 V 5 mA 450 mA 200 mA 2 µs 185 µs IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191205d MCMA35PD1200TB Package TO-240AA Ratings Symbol I RMS TVJ Top Tstg Weight Definition RMS current virtual junction temperature operation temperature storage temperature Conditions per terminal min. -40 -40 -40 typ. max. 80 140 125 125 81 Unit A °C °C °C g MD M T d Spp/App d Spb/Apb V ISOL mounting torque 2.5 terminal torque 2.5 creepage distance on surface | striking distance through air terminal to terminal terminal to backside 13.0 9.7 16.0 16.0 isolation voltage t = 1 second t = 1 minute 50/60 Hz, RMS; IISOL ≤ 1 mA 4800 4000 4 Nm 4 Nm mm mm V V Part description M = Module C = Thyristor (SCR) M = Thyristor A = (up to 1800V) 35 = Current Rating [A] PD = Phase leg 1200 = Reverse Voltage [V] TB = TO-240AA-1B Ordering Standard Ordering Number MCMA35PD1200TB Marking on Product MCMA35PD1200TB Delivery Mode Box Quantity Code No. 36 515940 Equivalent Circuits for Simulation I V0 R0 Thyristor V 0 max R0 max threshold voltage slope resistance * 0.87 8.6 * on die level T VJ = 140°C V mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per sem.


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