28F010 1024K (128K x 8) CMOS FLASH MEMORY
Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase
Y Quick Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Chip-Program
Y 100 000 Erase Program Cycles
Y 12 0V g5% VPP Y High-Performance Read
65 ns Maximum Access Time
Y CMOS Low Power Consumption 10 mA Typical Active Current 50 mA Typical Stand...
