Document
K6F4008U2G Family
Preliminary CMOS SRAM
Document Title
512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0 Initial Draft
Draft Date
June 11, 2003
Remark
Preliminary
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
- 1 - Revision 0.0 June 2003
K6F4008U2G Family
Preliminary CMOS SRAM
512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM
FEATURES
• Process Technology: Full CMOS • Organization: 512K x8 bit • Power Supply Voltage: 2.7~3.3V • Low Data Retention Voltage: 1.5V(Min) • Three State Outputs • Package Type: 48(36)-TBGA-6.00x7.00
GENERAL DESCRIPTION
The K6F4008U2G families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support .