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BC857BDW1T1G Dataheets PDF



Part Number BC857BDW1T1G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Dual General Purpose Transistors
Datasheet BC857BDW1T1G DatasheetBC857BDW1T1G Datasheet (PDF)

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/B.

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BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage BC856, SBC856 BC857, SBC857 BC858 VCEO −65 −45 −30 V Collector −Base Voltage BC856, SBC856 BC857, SBC857 BC858 VCBO −80 −50 −30 V Emitter −Base Voltage Collector Current −Continuous Collector Current − Peak VEBO IC IC −5.0 −100 −200 V mAdc mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation Per Devic.


SBC856BDW1T1G BC857BDW1T1G SBC857BDW1T1G


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