A Business Partner of Renesas Electronics Corporation.
Preliminary
NE85633 / 2SC3356
Data Sheet
R09DS0021EJ0300
NPN ...
A Business Partner of Renesas Electronics Corporation.
Preliminary
NE85633 / 2SC3356
Data Sheet
R09DS0021EJ0300
NPN Silicon RF
Transistor
Rev.3.00
NPN Epitaxial Silicon RF
Transistor for Microwave Low-Noise Amplification 3-pin Minimold
Jun 28, 2011
FEATURES
Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
ORDERING INFORMATION
Part Number NE85633 2SC3356
NE85633-T1B 2SC3356-T1B
Order Number
Package
NE85633-A 2SC3356-A NE85633-T1B-A 2SC3356-T1BA-
3-pin Minimold (Pb-Free)
Quantity 50 pcs (Non reel)
3 kpcs/reel
Supplying Form 8 mm wide embossed taping
Pin 3 (Collector) face the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office. The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base V...