AO3401

FEATURES The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. D G S Plastic-Encapsulate Mosfets AO3401 P-Channel MOSFET 1.Gate 2.Source 3.Drain SOT-23 Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A TA=25°C T =70°C Pulsed Drain Current B Power Dissipation A TA=25°C TA=70°C Junction and Storage Temperature Range VDS VGS I IDM PD TJ, TSTG Maximum -30 ±12 -4.2 -3.5 -30 1.4 1 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ Max 65 90 85 125 43 60 Unit V V A W °C Unit °C/W °C/W °C/W GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Page:P4-P1 Plastic-Encapsulate Mosfets AO3401 ...