30V N-Channel Enhancement Mode MOSFET
VDS= 30V RDS(ON), Vgs@10V, Ids@5.8A < 28mΩ RDS(ON), Vgs@4.5V, Ids@5.0A < 33mΩ RDS(ON), Vgs@2.5V, Ids@4.0A < 52mΩ
Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
AO3400
D
SOT-23-3L
GS
REF.
A B C D E
F
Millimeter Min. Max. 2.70 3.10 2.65 2.95 1.50 1....
