Document
SMD Type
MOSFIECT
N-Channel Enhancement Mode Field Effect Transistor AO3400 (KO3400)
Features
VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) 28m (VGS = 10V) RDS(ON) 33m (VGS = 4.5V) RDS(ON) 52m (VGS = 2.5V)
+0.12.4 -0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
3
12 0.95 +0.1
-0.1
1.9 +0.1 -0.1
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25
TA=70
Pulsed Drain Current *
Power Dissipation
TA=25
TA=70
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction and Storage Temperature Range
Symbol VDS VGS
ID
IDM
PD
RthJA Rthc TJ, TSTG
* Repetitive rating, pulse width limited by junction temperature.
Rating 30 12 5.8 4.9 30 1.4 1 125 60
-55 to 150
Unit V V
A
W /W /W
0-0.1 +0.10.38
-0.1
+0.10.97 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm
0.1 +0.05 -0.01
11.. BGasaete 22..ESmiotutrecre 33..cDolrlaeicntor
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SMD Type
AO3400 (KO3400)
MOSFIECT
Electrical Characteristics T.