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BZX55-4V3

NXP

Voltage regulator diodes

DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BZX55 series Voltage regulator diodes Product specification Supersedes data ...


NXP

BZX55-4V3

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DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BZX55 series Voltage regulator diodes Product specification Supersedes data of April 1992 1996 Apr 26 Philips Semiconductors Product specification Voltage regulator diodes FEATURES Total power dissipation: max. 500 mW Tolerance series: ±5% Working voltage range: nom. 2.4 to 75 V (E24 range) Non-repetitive peak reverse power dissipation: max. 40 W. APPLICATIONS Low voltage stabilizers or voltage references. The diodes are type branded. BZX55 series DESCRIPTION Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 ±5% tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V (BZX55-C2V4 to BZX55-C75). handbook, halfpage k a MAM239 Fig.1 Simplified outline (SOD27; DO-35) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IF IZSM Ptot PZSM PARAMETER continuous forward current non-repetitive peak reverse current total power dissipation non-repetitive peak reverse power dissipation tp = 100 µs; square wave; Tj = 25 °C prior to surge Tamb = 50 °C; note 1 Tamb = 50 °C; note 2 tp = 100 µs; square wave; Tj = 25 °C prior to surge tp = 8.3 ms; square wave; Tj ≤ 150 °C prior to surge Tstg Tj Notes 1. Device mounted on a printed circuit-board without metallization pad; lead length max. 2. Tie-point temperature ≤ 50 °C; lead length 8 mm. ELECTRICAL CHARACTE...




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