Document
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D049
BZX399 series Voltage regulator diodes
Product specification 1999 Jun 04
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES • Total power dissipation: max. 300 mW • Tolerance: ±5% • Working voltage range: nom. 1.8 to 43 V (E24 range) • Improved IZ/VZ characteristic at low currents (IZ = 50 µA). This results in a noise free and sharp breakdown knee. APPLICATIONS • General regulation functions, where low noise at low currents is required • Low power consumption applications (e.g. hand-held applications). DESCRIPTION Low-power low noise voltage regulator diodes in SOD323 plastic SMD package. The diodes are available in the normalized E24 ±5% tolerance range. The series consists of 34 types with nominal working voltages from 1.8 to 43 V. MARKING
TYPE NUMBER MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER MARKING CODE
BZX399 series
PINNING PIN 1 2
cathode anode
handbook, halfpage
1
Top view
Fig.1 Simplified outline (SOD323) and symbol.
,
BJ BK BL BM BN BP BQ BR BS
DESCRIPTION
2
MAM387
TYPE NUMBER
MARKING CODE
BZX399-C1V8 BZX399-C2V0 BZX399-C2V2 BZX399-C2V4 BZX399-C2V7 BZX399-C3V0 BZX399-C3V3 BZX399-C3V6 BZX399-C3V9
B1 B2 B3 B4 B5 B6 B7 B8 B9
BZX399-C4V3 BZX399-C4V7 BZX399-C5V1 BZX399-C5V6 BZX399-C6V2 BZX399-C6V8 BZX399-C7V5 BZX399-C8V2 BZX399-C9V1
B0 BA BB BC BD BE BF BG BH
BZX399-C10 BZX399-C11 BZX399-C12 BZX399-C13 BZX399-C15 BZX399-C16 BZX399-C18 BZX399-C20 BZX399-C22
BZX399-C24 BZX399-C27 BZX399-C30 BZX399-C33 BZX399-C36 BZX399-C39 BZX399-C43
BT BU BV BW BX BY BZ
1999 Jun 04
2
Philips Semiconductors
Product specification
Voltage regulator diodes
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IF IZSM Ptot Tstg Tj Note 1. Device mounted on a FR4 printed circuit-board. ELECTRICAL CHARACTERISTICS Total BZX399-C series Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current BZX399-C1V8 BZX399-C2V0 BZX399-C2V2 BZX399-C2V4 BZX399-C2V7 BZX399-C3V0 BZX399-C3V3 BZX399-C3V6 BZX399-C3V9 BZX399-C4V3 BZX399-C4V7 BZX399-C5V1 BZX399-C5V6 BZX399-C6V2 BZX399-C6V8 BZX399-C7V5 BZX399-C8V2 BZX399-C9V1 BZX399-C10 BZX399-C11 BZX399-C12 BZX399-C13 BZX399-C15 to 43 1999 Jun 04 VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 2 V VR = 2 V VR = 2 V VR = 2 V VR = 3 V VR = 3 V VR = 4 V VR = 5 V VR = 5 V VR = 5 V VR = 6 V VR = 7 V VR = 7 V VR = 8 V VR = 9 V VR = 10 V VR = 0.7VZnom 3 2 1 0.5 0.2 0.05 0.02 2 1 0.5 0.1 2 1 1 0.1 0.01 0.1 0.2 0.1 0.1 0.05 0.05 0.05 0.01 CONDITIONS IF = 10 mA; see Fig.5 IF = 100 mA; see Fig.5 0.9 1.0 PARAMETER continuous forward current non-repetitive peak reverse current total power dissipation storage temperature junction temperature tp = 100 µs; square wave; Tamb = 25 °C prior to surge Tamb = 25 °C; note 1 CONDITIONS − MIN.
BZX399 series
MAX. 250
UNIT mA
see Tables 1 and 2 − −65 − 300 +150 150 mW °C °C
MAX. V V µA µA µA µA µA µA µA µA µA µA µA µA µA µA µA µA µA µA µA µA µA µA µA
UNIT
Philips Semiconductors
Product specification
Voltage regulator diodes
Table 1 Per type BZX399-C1V8 to C15 Tj = 25 °C unless otherwise specified. WORKING VOLTAGE VZ (V) IZ = 50 µA Tol. ±5% MIN. 1V8 2V0 2V2 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 Note 1. ∆VZ = VZ at 100 µA minus VZ at 10 µA. 1.71 1.90 2.09 2.28 2.57 2.85 3.14 3.42 3.71 4.09 4.47 4.85 5.32 5.89 6.46 7.13 7.79 8.65 9.50 10.45 11.40 12.35 14.25 MAX. 1.89 2.10 2.31 2.52 2.84 3.15 3.47 3.78 4.10 4.52 4.94 5.36 5.88 6.51 7.14 7.88 8.61 9.56 10.50 11.55 12.60 13.65 15.75 MAX. 0.65 0.70 0.75 0.80 0.85 0.90 0.93 0.95 0.97 0.99 0.97 0.60 0.20 0.10 0.10 0.15 0.15 0.10 0.10 0.11 0.12 0.13 0.15 TYP. −0.85 −0.95 −1.05 −1.15 −1.35 −1.50 −1.65 −1.80 −1.95 −2.05 −1.90 0.15 1.75 2.35 3.00 3.60 4.25 5.00 5.80 6.70 7.65 8.60 10.50 MAX. 425 410 390 370 350 325 310 300 290 280 275 300 275 250 215 170 150 120 110 110 105 105 100 VOLTAGE CHANGE ∆VZ(V) (note 1) TEMP. COEFF. SZ (mV/K) IZ = 50 µA (see Figs 2, 3 and 4) DIODE CAP. Cd (pF) at f = 1 MHz; VR = 0 V
BZX399 series
BZX399-C XXX
NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 µs; Tamb = 25 °C
MAX. 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 5.0 4.0 3.0 3.0 3.0 3.0 3.0 3.0 2.5 2.5 2.5 2.0
1999 Jun 04
4
Philips Semiconductors
Product specification
Voltage regulator diodes
Table 2 Per type BZX399-C16 to C43 Tj = 25 °C unless otherwise specified. WORKING VOLTAGE VZ (V) IZ = 50 µA Tol. ±5% MIN. 16 18 20 22 24 27 30 33 36 39 43 Note 1. ∆VZ = VZ at 100 µA minus VZ at 10 µA. THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-s Notes 1. Device mounted on a FR4 printed circuit-board. 2. Soldering point of the cathode tab. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 15.20 17.10 19.00 20.90 22.80 25.65 28.50 31.35 34.20 37.05 40.85 MAX. 16.80 18.90 21.00 23.10 25.20 28.35 31.50 34.65 37.80 40.95 45.15 MAX. 0.16 0.18 0.20 0.22 0.24 0.27 0.30 0.30 0.30 0.30 0.30 T.