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MFE212

Digitron Semiconductors

DUAL GATE MOSFETS

MFE211-MFE212 High-reliability discrete products and engineering services since 1977 DUAL GATE MOSFETS FEATURES  Ava...


Digitron Semiconductors

MFE212

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MFE211-MFE212 High-reliability discrete products and engineering services since 1977 DUAL GATE MOSFETS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS. Rating Drain Source Voltage Drain Gate Voltage Gate Current Drain Current – Continuous Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TC = 25°C Derate above 25°C Storage Channel Temperature Range Junction Temperature Range Lead Temperature, 1/16” from Seated Surface for 10 Seconds Symbol VDSX VDG1 VDG2 IG1 IG2 ID PD PD Tstg TJ TL Value 20 35 35 ±10 ±10 50 360 2.4 1.2 8.0 -65 to +200 -65 to +175 300 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Drain Source Breakdown Voltage (ID = 10 µAdc, VG1S = VG2S = -4.0 Vdc) Gate 1 – Source...




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