DatasheetsPDF.com

BZX284-C75 Dataheets PDF



Part Number BZX284-C75
Manufacturers NXP
Logo NXP
Description Voltage regulator diodes
Datasheet BZX284-C75 DatasheetBZX284-C75 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D154 BZX284 series Voltage regulator diodes Product specification Supersedes data of 1996 Apr 17 1999 Apr 19 Philips Semiconductors Product specification Voltage regulator diodes FEATURES • Total power dissipation: max. 400 mW • Two tolerance series: ±2% and ±5% • Working voltage range: nom. 2.4 to 75 V (E24 range). handbook, 4 columns BZX284 series DESCRIPTION Low-power voltage regulator diodes in a small ceramic SMD SOD110 package. The .

  BZX284-C75   BZX284-C75



Document
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D154 BZX284 series Voltage regulator diodes Product specification Supersedes data of 1996 Apr 17 1999 Apr 19 Philips Semiconductors Product specification Voltage regulator diodes FEATURES • Total power dissipation: max. 400 mW • Two tolerance series: ±2% and ±5% • Working voltage range: nom. 2.4 to 75 V (E24 range). handbook, 4 columns BZX284 series DESCRIPTION Low-power voltage regulator diodes in a small ceramic SMD SOD110 package. The diodes are available in the normalized E24 ±2% (BZX284-B) and ±5% (BZX284-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. cathode mark k k a APPLICATIONS • General regulation functions. a bottom view side view top view MAM219 Fig.1 Simplified outline (SOD110) and symbol. MARKING TYPE NUMBER BZX284-B2V4 BZX284-B2V7 BZX284-B3V0 BZX284-B3V3 BZX284-B3V6 BZX284-B3V9 BZX284-B4V3 BZX284-B4V7 BZX284-B5V1 BZX284-B5V6 BZX284-B6V2 BZX284-B6V8 BZX284-B7V5 BZX284-B8V2 BZX284-B9V1 BZX284-B10 BZX284-B11 BZX284-B12 BZX284-B13 MARKING CODE WO WP WQ WR WS WT WU WV WW WX WY WZ XA XB XC XD XE XF XG TYPE NUMBER BZX284-B15 BZX284-B16 BZX284-B18 BZX284-B20 BZX284-B22 BZX284-B24 BZX284-B27 BZX284-B30 BZX284-B33 BZX284-B36 BZX284-B39 BZX284-B43 BZX284-B47 BZX284-B51 BZX284-B56 BZX284-B62 BZX284-B68 BZX284-B75 − MARKING CODE XH XI XJ XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY − TYPE NUMBER BZX284-C2V4 BZX284-C2V7 BZX284-C3V0 BZX284-C3V3 BZX284-C3V6 BZX284-C3V9 BZX284-C4V3 BZX284-C4V7 BZX284-C5V1 BZX284-C5V6 BZX284-C6V2 BZX284-C6V8 BZX284-C7V5 BZX284-C8V2 BZX284-C9V1 BZX284-C10 BZX284-C11 BZX284-C12 BZX284-C13 MARKING CODE YO YP YQ YR YS YT YU YV YW YX YY YZ ZA ZB ZC ZD ZE ZF ZG TYPE NUMBER BZX284-C15 BZX284-C16 BZX284-C18 BZX284-C20 BZX284-C22 BZX284-C24 BZX284-C27 BZX284-C30 BZX284-C33 BZX284-C36 BZX284-C39 BZX284-C43 BZX284-C47 BZX284-C51 BZX284-C56 BZX284-C62 BZX284-C68 BZX284-C75 − MARKING CODE ZH ZI ZJ ZK ZL ZM ZN ZO ZP ZQ ZR ZS ZT ZU ZV ZW ZX ZY − 1999 Apr 19 2 Philips Semiconductors Product specification Voltage regulator diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IF IZSM Ptot Tstg Tj Note 1. Device mounted on a printed-circuit board: 11 × 25 × 1.6 mm. ELECTRICAL CHARACTERISTICS Total BZX284-B and C series Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current BZX284-B/C2V4 BZX284-B/C2V7 BZX284-B/C3V0 BZX284-B/C3V3 BZX284-B/C3V6 BZX284-B/C3V9 BZX284-B/C4V3 BZX284-B/C4V7 BZX284-B/C5V1 BZX284-B/C5V6 BZX284-B/C6V2 BZX284-B/C6V8 BZX284-B/C7V5 BZX284-B/C8V2 BZX284-B/C9V1 BZX284-B/C10 BZX284-B/C11 BZX284-B/C12 BZX284-B/C13 BZX284-B/C15 to 75 VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 2 V VR = 2 V VR = 2 V VR = 4 V VR = 4 V VR = 5 V VR = 5 V VR = 6 V VR = 7 V VR = 8 V VR = 8 V VR = 8 V VR = 0.7VZnom CONDITIONS IF = 10 mA; see Fig.4 IF = 100 mA; see Fig.4 PARAMETER continuous forward current non-repetitive peak reverse current total power dissipation storage temperature junction temperature tp = 100 µs; square wave; Tamb = 25 °C prior to surge Tamb = 25 °C; note 1 CONDITIONS MIN. − BZX284 series MAX. 250 UNIT mA see Tables 1 and 2 − −65 − 400 +150 150 mW °C °C MAX. 0.9 1.1 50 20 10 5 5 3 3 3 2 1 3 2 1 700 500 200 100 100 100 50 UNIT V V µA µA µA µA µA µA µA µA µA µA µA µA µA nA nA nA nA nA nA nA 1999 Apr 19 3 1999 Apr 19 4 Philips Semiconductors Table 1 Per type BZX284-B/C2V4 to B/C24 Tj = 25 °C unless otherwise specified. WORKING VOLTAGE VZ (V) at IZtest = 5 mA Tol. ±2% (B) MIN. 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 2.35 2.65 2.94 3.23 3.53 3.82 4.21 4.61 5.00 5.49 6.08 6.66 7.35 8.04 8.92 9.80 10.80 11.80 12.70 14.70 15.70 17.60 19.60 21.60 23.50 MAX. 2.45 2.75 3.06 3.37 3.67 3.98 4.39 4.79 5.20 5.71 6.32 6.94 7.65 8.36 9.28 10.20 11.20 12.20 13.30 15.30 16.30 18.40 20.40 22.40 24.50 Tol. ±5% (C) MIN. 2.2 2.5 2.8 3.1 3.4 3.7 4.0 4.4 4.8 5.2 5.8 6.4 7.0 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 MAX. 2.6 2.9 3.2 3.5 3.8 4.1 4.6 5.0 5.4 6.0 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 DIFFERENTIAL RESISTANCE rdif (Ω) at IZtest = 1 mA TYP. 275 300 325 350 375 400 410 425 400 80 40 30 15 20 20 20 25 25 25 25 25 25 30 30 30 MAX. 400 450 500 500 500 500 600 500 480 400 150 80 80 80 100 150 150 150 170 200 200 225 225 250 250 at IZtest = 5 mA TYP. 70 75 80 85 85 85 80 50 40 15 6 6 2 2 2 2 2 2 2 3 4 4 4 5 6 MAX. 100 100 95 95 90 90 90 80 60 40 10 15 10 10 10 10 10 10 10 15 20 20 20 25 30 TEMP. COEFF. SZ (mV/K) at IZtest = 5 mA (see Figs 5 and 6) TYP. −1.6 −2.0 −2.1 −2.4 −2.4 −2.5 −2.5 −1.4 −0.8 1.2 2.3 3.0 4.0 4.6 5.5 6.4 7.4 8.4 9.4 11.4 12.4 14.4 16.4 18.4 20.4 DIODE CAP. Cd (pF) at f = 1 MHz; VR = 0 V MAX. 450 440 425 410 390 370 350 325 300 275 250 215 170 150 120 110 108 105 103 99 97 93 88 84 80 NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 µs; Tamb = 2.


BZX284-C6V8 BZX284-C75 BZX284-C7V5


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)