NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/526
Devices
2N3879
TECHNICAL DATA
Qualified Level JANTX JANTXV...
NPN POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/526
Devices
2N3879
TECHNICAL DATA
Qualified Level JANTX JANTXV
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current Collector Current
Total Power Dissipation
@ TC = 250C (1)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case 1) Derate linearly 200 mW/0C for TC > 250C
Symbol VCEO VCBO VEBO IB IC PT
TJ, Tstg
Value 75 120 7.0 5.0 7.0 35
-65 to +200
Symbol RθJC
Max. 5.0
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 200 mAdc
V(BR)CEO
Collector-Emitter Cutoff Current VCE = 50 Vdc
ICEO
Collector-Emitter Cutoff Current VCE = 100 Vdc, VBE = 1.5 Vdc
ICEX
Collector-Base Cutoff Current VCB = 120 Vdc
ICBO
Emitter-Base Cutoff Current VEB = 7.0 Vdc
IEBO
Unit Vdc Vdc Vdc Adc Adc W 0C
Unit 0C/...
