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2N5432

N-Channel Silicon Junction Field-Effect Transistor

Description

8/2014 2N5432, 2N5433, 2N5494 N-Channel Silicon Junction Field-Effect Transistor ∙ Low rDS(on) ∙ Excellent Switching ∙ Low Cutoff Current Absolute maximum ratings at TA = 25oC Reverse Gate Source & Gate Drain Voltage -25V Continuous Forward Gate Current 100 mA Continuous Device Power Dissipation 300 mW Power Derating 2.3 mW/oC Storage Temperature ...

InterFET

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