2N5494

8/2014 2N5432, 2N5433, 2N5494 N-Channel Silicon Junction Field-Effect Transistor ∙ Low rDS(on) ∙ Excellent Switching ∙ Low Cutoff Current Absolute maximum ratings at TA = 25oC Reverse Gate Source & Gate Drain Voltage -25V Continuous Forward Gate Current 100 mA Continuous Device Power Dissipation 300 mW Power Derating 2.3 mW/oC Storage Temperature Range -65oC to +150oC At 25oC free air temperature Static Electrical Characteristics Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (pulsed) IDSS Dynamic Electrical Characteristics Drain -Source On Resistance rds(on) Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Turn-On Delay Time Crss td Rise Time Turn-Off Time tr toff Fall Time tf 2N5432 NJ450 Min Max -25 -200 -4 -10 150 5 30 15 4 1 6 30 2N5433 NJ450 Min Max -25 -200 -3 -9 100 7 30 15 4 1 6 30 2N5434 NJ903 Min Max -25 -200 -1 -4 30 10 30 1...