SSF1030B

SSF1030B Feathers:  Advanced trench process technology  Ultra low Rdson, typical 25mohm  High avalanche energy, 100% test  Fully characterized avalanche voltage and current ID =7A BV=100V Rdson=25mΩ（typ.） Description: The SSF1030B is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF1030B is assembled in high reliability and qualified assembly house. Application:  Power switching application Absolute Maximum Ratings Parameter ID@Tc=25 ْC ID@Tc=100ْC IDM PD@TC=25ْC VGS EAS EAR Continuous drain current,VGS@10V Continuous drain current,VGS@10V Pulsed drain current ① Power dissipation Gate-to-Source voltage Single pulse avalanche energy ② Repetitive avalanche energy TJ TSTG Operating Junction and Storage Temperature Range SOP-8 TOP View Marking and pin Assignment Max. 7 5.0 30 8.8 ±20 33 TBD –55 to +175...