SSF1122

SSF1122 Feathers: „ Advanced trench process technology „ Ultra low Rdson „ High avalanche energy, 100% test „ Fully characterized avalanche voltage and current ID =60A BV=110V Rdson=20mΩ（Typ） Description: The SSF1122 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF1122 is assembled in high reliability and qualified assembly house. Application: „ Power switching application SSF1122 TOP View (TO220) Absolute Maximum Ratings Parameter ID@Tc=25 ْC Continuous drain current,VGS@10V ID@Tc=100ْC Continuous drain current,VGS@10V IDM Pulsed drain current ① PD@TC=25ْC Power dissipation Linear derating factor VGS EAS EAR TJ TSTG Gate-to-Source voltage Single pulse avalanche energy Repetitive avalanche energy Operating Junction and Storage Temperature Range ② Max. 60 50 240 181 2.0 ±20 240 TBD –55 to +175 Units ...