SSF1122D

SSF1122D Feathers: „ Advanced trench process technology „ Ultra low Rdson „ High avalanche energy, 100% test „ Fully characterized avalanche voltage and current ID =60A BV=110V Rdson=20mΩ（Typ.） Description: The SSF1122D is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF1122D is assembled in high reliability and qualified assembly house. Application: „ Power switching application SSF1122D TOP View (DPAK) Absolute Maximum Ratings Parameter ID@Tc=25 ْC Continuous drain current,VGS@10V ID@Tc=100ْC IDM Continuous drain current,VGS@10V Pulsed drain current ① PD@TC=25ْC Power dissipation Linear derating factor VGS Gate-to-Source voltage EAS Single pulse avalanche energy ② EAR Repetitive avalanche energy TJ TSTG Operating Junction and Storage Temperature Range Max. 60 50 240 143 2.0 ±20 240 TBD –55 to +175 ...