SSF2112H2

                                 Main Product Characteristics: VDSS 20V RDS(on) 10mohm(typ.) ID 8A TSSOP-8  Features and Benefits: „ Advanced trench MOSFET process technology „ Special designed for buttery protection, load switching and general power management „ Ultra low on-resistance with low gate charge „ Fast switching and reverse body recovery „ 150℃ operating temperature SSF2112H2  43 21 5 678 D1 S1 S1 28121025HA2 G1 D2 S2 S2 G1 G2 D1 G2 S1 D2 S2 Marking and pin Assignment  Schematic diagram        Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in buttery protection, power switching application and a wide variety of other applications  Absolute max Rating: Parameter Drain-Source Voltage Gate-Source Vo...