MOSFET
Main Product Characteristics:
VDSS
20V
RDS(on) 14.5mohm(typ.)
ID 8.5A DFN2X5-6L-EP
SSF2116EJ3
Marking and pin Assi...
Description
Main Product Characteristics:
VDSS
20V
RDS(on) 14.5mohm(typ.)
ID 8.5A DFN2X5-6L-EP
SSF2116EJ3
Marking and pin Assignment
Schematic diagram
Features and Benefits:
Advanced MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications
Absolute max Rating:
Symbol ID @ TC = 25°C ID @ TC = 25°C IDM VGS PD @TC = 25°C TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current ② Gate to sou...
Similar Datasheet