MMBT5089【NPN Transistors / 200mW / SOT-23】
Features
◆ For low noise, high gain, general purpose amplifier applications a...
MMBT5089【
NPN Transistors / 200mW / SOT-23】
Features
◆ For low noise, high gain, general purpose amplifier applications at collector currents from 1μA to 50mA.
PACKAGE OUTLINE
Absolute Maximum Ratings【TA=25℃】
Parameter
Symbol
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current
VCBO VCEO VEBO
Ic
Power Dissipation Derate above 25℃
PD
DC Current Gain
Small Signal Current Gain Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Collector Emitter Saturation Voltage Base Emitter On Voltage Collector Cutoff Current
Emitter Cutoff Current
VCE=5V, IC=100uA VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=1mA, f=1KHz
IC=100μA IC=1mA
IC=10mA, IB=1mA IC=10mA, VCE=5V
VCB=15V VEB=3V VEB=4.5V
hFE
hfe V(BR)CBO V(BR)CEO
VCEsat VBEon
ICBO
IEBO
Collector Base Capacitance
VCB=5V, f = 100KHz
Ccb
Emitter Base Capacitance
VBE=0.5V, f = 100KHz
Gain Bandwidth Product
VCE=5V, IC=500μA, f=20MHz
Noise Figure
VCE=5V, IC=100μA, Rs=10K...