General Purpose Transistors
MMBT4403-G (PNP)
RoHS Device
Features
- Epitaxial planar die construction. - Ideal for medi...
General Purpose
Transistors
MMBT4403-G (
PNP)
RoHS Device
Features
- Epitaxial planar die construction. - Ideal for medium power amplification and switching.
Mechanical data
- Case: SOT-23, molded plastic. - Terminals: Solderable per MIL-STD-750,
method 2026. - Approx. weight: 0.008 grams(approx.).
Diagram:
Collector 3
1 Base
2 Emitter
0.056(1.40) 0.047(1.20)
0.044(1.10) 0.035(0.90)
SOT-23
0.119(3.00) 0.110(2.80)
3
12
0.083(2.10) 0.066(1.70)
0.006(0.15) 0.002(0.05)
0.103(2.60) 0.086(2.20)
0.020(0.50) 0.013(0.35)
0.006(0.15) max 0.007(0.20) min
Dimensions in inches and (millimeter)
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector power dissipation Thermal resistance from junction to ambient Junction temperature Storage temperature range
Symbol VCBO VCEO VEBO IC PC RθJA TJ TSTG
Value -40 -40 -5 -600 300 417 150
-55 to +150
Company reserves the right to improve pr...
