Document
MEI SEMI INC.
Production specification
NPN Silicon Epitaxial Planar Transistor
FEATURES
z NPN Silicon Planar. z Switching Transistor.
Pb
Lead-free
MMBT4124
ORDERING INFORMATION
Type No.
Marking
MMBT4124
ZC
SOT-23
Package Code SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
30
VCEO
Collector-Emitter Voltage
25
VEBO
Emitter-Base Voltage
5
IC Collector Current -Continuous
0.2
PC Collector Dissipation
330
Tj,Tstg
Junction and Storage Temperature
-55~150
Units V V V A mW ℃
Document number: SSSTC232 Rev.A
www.meisemi.com 1
MEI SEMI INC.
Production specification
NPN Silicon Epitaxial Planar Transistor
MMBT4124
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=10μA,IE=0
30
V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0
25
V
Emitter-base breakdown voltage
V(.