MMBT9013G

MMBT9013【NPN Transistors / 200mW / SOT-23】 NPN Silicon Epitaxial Planar Transistors Features ◆ Switching and Amplifier applications PACKAGE OUTLINE Absolute Maximum Ratings【TA=25℃】 Parameter Symbol Min Typ Max Collector Emitter Voltage Emitter Base Voltage Collector Current VCEO VEBO ----- 30 5 Ic ----- 500 --------- Power Dissipation VCE=1V, IC=100mA MMBT9013G DC Current Gain VCE=1V, IC=100mA MMBT9013H VCE=1V, IC=500mA Collector Emitter Breakdown Voltage IC=1mA Collector Saturation Voltage IC=500mA, IB=20mA Base Saturation Voltage IC=500mA, IB=20mA Collector Cutoff Current VCB = 31 V Emitter Base Cutoff Current VEB = 5.1 V PD hFE V(BR)CEO VCEsat VBE sat ICBO IEBO ----- 200 ----- 100 ----- 250 160 ----- 400 40 ----- 30 ----- 0.15 ----- 1.2 ----- 100 50 Base Emitter Voltage VCE = 1 V, IC = 50 mA VBE 0.6 0.75 Collector Base Capacitance VCB=10V, f=1MHz CCBO ----- 12 ----- Gain Bandwidth Product VCE=5V, IC=10mA, f=50MHz fT ----- 1...