MMBT9014
NPN Silicon Epitaxial Planar Transistors
For switching and AF amplifier applications
As complementary types t...
MMBT9014
NPN Silicon Epitaxial Planar
Transistors
For switching and AF amplifier applications
As complementary types the
PNP transistors MMBT9015 is recommended.
Absolute Maximum Ratings (Ta = 25℃)
PARAMETER
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL
VCBO VCEO VEBO
IC Ptot Tj Ts
Characteristics at Ta = 25℃
PARAMETER
DC Current Gain
at VCE = 5 V, IC = 1 mA
MMBT9014B MMBT9014C
MMBT9014D
Collector Cutoff Current
at VCB = 50 V
Emitter Cutoff Current
at VEB = 5 V
Collector Base Breakdown Voltage
at IC = 100 µA
Collector Emitter Breakdown Voltage
at IC = 1 mA
Emitter Base Breakdown Voltage
at IE = 100 µA
Collector Emitter Saturation Voltage
at IC = 100 mA, IB = 5 mA
Base Emitter Saturation Voltage
at IC = 100 mA, IB = 5 mA
Gain Bandwidth Product
at VCE = 5 V, IC = 10 mA
Output Capacitance
at VCB = 10 V, f = 1 MHz
Noise Figure at VCE = 5 V, IC...