MMBT9014

MMBT9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications As complementary types the PNP transistor MMBT9015 is recommended. Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj TS SOT-23 Plastic Package Value 50 45 5 100 200 150 - 55 to + 150 Unit V V V mA mW OC OC Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 5 V, IC = 1 mA MMBT9014B MMBT9014C MMBT9014D Collector Cutoff Current at VCB = 50 V Emitter Cutoff Current at VEB = 5 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 100 µA Collector Emitter Saturation Voltage at IC = 100 mA, IB = 5 mA Base Emitter Saturation Voltage at IC = 100 mA, IB = 5 mA Gain Bandwidth Product at VCE = 5 V, IC = 10 mA Output Cap...