MMBR5031

MMBR5031 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) RF AMPLIFIER TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol vCEO vCBO v EBO 'C THERMAL CHARACTERISTICS Characteristic *Total Device Dissipation, T^ = 25°C Derate above 25°C Symbol PD Storage Temperature Tstg Thermal Resistance Junction to Ambient R&JA mmPackage mounted on 99.5% alumina 10 x 8 x 0.6 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage Ug = 1.0 mAdc, Ib = 0) Collector-Base Breakdown Voltage (|C = 0.01 mAdc, lg = 0) Emitter-Base Breakdown Voltage (IE = 0-01 mAdc, cl = 0) Collector Cutoff Current (VCB = 6.0 Vdc, El = 0) ON CHARACTERISTICS DC Current Gain Oc = 1.0 mAdc, Vce 6.0 Vdc) SMALL-SIGNAL CHARACTERISTICS —Current-Gain Bandwidth Product dp = 5.0 mAdc, Vqe = 6.0 Vdc, f 100 MHz) Collector-Base Capacita...